SISF00DN-T1-GE3 Pricing (USD) [134082PC Stock]
- 1 pcs$0.27586
- Nimewo Pati:
- SISF00DN-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET DUAL N-CH 30V POWERPAK 12.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Tiristors - TRIACs, Tiristors - SCR, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SISF00DN-T1-GE3 electronic components. SISF00DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISF00DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISF00DN-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SISF00DN-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET DUAL N-CH 30V POWERPAK 12
Seri :
TrenchFET® Gen IV
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual) Common Drain
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
60A (Tc)
RD sou (Max) @ Id, Vgs :
5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
53nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2700pF @ 15V
Pouvwa - Max :
69.4W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® 1212-8SCD
Pake Aparèy Founisè :
PowerPAK® 1212-8SCD
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