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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APTM100DA18TG

Microsemi Corporation - APTM100DA18TG

KEY Part #: K6396611

APTM100DA18TG Pricing (USD) [1374PC Stock]

  • 1 pcs$31.66919
  • 100 pcs$31.51163
Nimewo Pati:
APTM100DA18TG
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 1000V 43A SP4.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - IGBTs - Arrays, Tiristors - SCR, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APTM100DA18TG electronic components. APTM100DA18TG can be shipped within 24 hours after order. If you have any demands for APTM100DA18TG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM100DA18TG Atribi pwodwi yo

Nimewo Pati : APTM100DA18TG
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 1000V 43A SP4
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 43A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 210 mOhm @ 21.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 5mA
Chaje Gate (Qg) (Max) @ Vgs : 372nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 10400pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 780W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SP4
Pake / Ka : SP4

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