Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 1.2KV 6A TO220AC
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
6A
Voltage - Forward (Vf) (Max) @ Si :
3V @ 6A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
80ns
Kouran - Fèy Reverse @ Vr :
5µA @ 1200V
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AC
Operating Tanperati - Junction :
-55°C ~ 150°C