Diodes Incorporated - 1N5406G-T

KEY Part #: K6427909

1N5406G-T Pricing (USD) [787216PC Stock]

  • 1 pcs$0.04722
  • 1,200 pcs$0.04699
  • 2,400 pcs$0.04307
  • 6,000 pcs$0.04046
  • 12,000 pcs$0.03785
  • 30,000 pcs$0.03472

Nimewo Pati:
1N5406G-T
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
DIODE GEN PURP 600V 3A DO201AD. Rectifiers 3.0A 600V
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tiristors - SCR, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Diodes Incorporated 1N5406G-T electronic components. 1N5406G-T can be shipped within 24 hours after order. If you have any demands for 1N5406G-T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5406G-T Atribi pwodwi yo

Nimewo Pati : 1N5406G-T
Manifakti : Diodes Incorporated
Deskripsyon : DIODE GEN PURP 600V 3A DO201AD
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 3A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2µs
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Kapasite @ Vr, F : 40pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : DO-201AD, Axial
Pake Aparèy Founisè : DO-201AD
Operating Tanperati - Junction : -65°C ~ 150°C

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