Infineon Technologies - BSO083N03MSGXUMA1

KEY Part #: K6404112

[2124PC Stock]


    Nimewo Pati:
    BSO083N03MSGXUMA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 30V 11A 8DSO.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal and Diodes - Rèkteur - Single ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies BSO083N03MSGXUMA1 electronic components. BSO083N03MSGXUMA1 can be shipped within 24 hours after order. If you have any demands for BSO083N03MSGXUMA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSO083N03MSGXUMA1 Atribi pwodwi yo

    Nimewo Pati : BSO083N03MSGXUMA1
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 30V 11A 8DSO
    Seri : OptiMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 8.3 mOhm @ 14A, 10V
    Vgs (th) (Max) @ Id : 2V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 27nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 2100pF @ 15V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.56W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : PG-DSO-8
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

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