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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NVBLS0D7N04M8TXG

ON Semiconductor - NVBLS0D7N04M8TXG

KEY Part #: K6402003

NVBLS0D7N04M8TXG Pricing (USD) [38352PC Stock]

  • 1 pcs$1.01949
Nimewo Pati:
NVBLS0D7N04M8TXG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
NMOS TOLL 40V 1.2 MOHM.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in ON Semiconductor NVBLS0D7N04M8TXG electronic components. NVBLS0D7N04M8TXG can be shipped within 24 hours after order. If you have any demands for NVBLS0D7N04M8TXG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVBLS0D7N04M8TXG Atribi pwodwi yo

Nimewo Pati : NVBLS0D7N04M8TXG
Manifakti : ON Semiconductor
Deskripsyon : NMOS TOLL 40V 1.2 MOHM
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 240A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 0.75 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 188nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 12000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 357W (Tj)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-HPSOF
Pake / Ka : 8-PowerSFN

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