Infineon Technologies - SIPC10N60C3X1SA2

KEY Part #: K6419382

SIPC10N60C3X1SA2 Pricing (USD) [108513PC Stock]

  • 1 pcs$0.34256
  • 12,924 pcs$0.34086

Nimewo Pati:
SIPC10N60C3X1SA2
Manifakti:
Infineon Technologies
Detaye deskripsyon:
TRANSISTOR N-CH.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in Infineon Technologies SIPC10N60C3X1SA2 electronic components. SIPC10N60C3X1SA2 can be shipped within 24 hours after order. If you have any demands for SIPC10N60C3X1SA2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIPC10N60C3X1SA2 Atribi pwodwi yo

Nimewo Pati : SIPC10N60C3X1SA2
Manifakti : Infineon Technologies
Deskripsyon : TRANSISTOR N-CH
Seri : *
Estati Pati : Active
FET Kalite : -
Teknoloji : -
Drenaj nan Voltage Sous (Vdss) : -
Kouran - Drenaj Kontinye (Id) @ 25 ° C : -
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : -
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -
Mounting Kalite : -
Pake Aparèy Founisè : -
Pake / Ka : -

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