Toshiba Memory America, Inc. - TC58NYG2S0HBAI4

KEY Part #: K937136

TC58NYG2S0HBAI4 Pricing (USD) [15996PC Stock]

  • 1 pcs$2.86455

Nimewo Pati:
TC58NYG2S0HBAI4
Manifakti:
Toshiba Memory America, Inc.
Detaye deskripsyon:
4GB SLC NAND 24NM BGA 9X11 1.8V. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: PMIC - Display Chofè, Revèy / Distribisyon - Minis pwogramasyon ak osila, Lojik - Flip Flops, PMIC - switch distribisyon pouvwa, chofè chaj, Embedded - Microcontroller, Microprocessor, FPGA M, PMIC - regilatè Voltage - lineyè + oblije chanje, Akizisyon Done - Analog pou Digital Convertisseurs and Entèfas - Serializers, Deserializers ...
Avantaj konpetitif:
We specialize in Toshiba Memory America, Inc. TC58NYG2S0HBAI4 electronic components. TC58NYG2S0HBAI4 can be shipped within 24 hours after order. If you have any demands for TC58NYG2S0HBAI4, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TC58NYG2S0HBAI4 Atribi pwodwi yo

Nimewo Pati : TC58NYG2S0HBAI4
Manifakti : Toshiba Memory America, Inc.
Deskripsyon : 4GB SLC NAND 24NM BGA 9X11 1.8V
Seri : -
Estati Pati : Active
Kalite memwa yo : Non-Volatile
Fòma memwa : FLASH
Teknoloji : FLASH - NAND (SLC)
Size memwa : 4Gb (512M x 8)
Frè frekans lan : -
Ekri Sik Tan - Pawòl, Page : 25ns
Tan aksè : -
Entèfas memwa : -
Voltage - Pwovizyon pou : 1.7V ~ 1.95V
Operating Tanperati : -40°C ~ 85°C (TA)
Mounting Kalite : Surface Mount
Pake / Ka : 63-VFBGA
Pake Aparèy Founisè : 63-TFBGA (9x11)

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