[1226PC Stock]
- Nimewo Pati:
- RSS120N03FU6TB
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 30V 12A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - RF, Tiristors - SCR, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RSS120N03FU6TB electronic components. RSS120N03FU6TB can be shipped within 24 hours after order. If you have any demands for RSS120N03FU6TB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RSS120N03FU6TB Atribi pwodwi yo
Nimewo Pati :
RSS120N03FU6TB
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 30V 12A 8SOIC
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
10 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
25nC @ 5V
Vgs (Max) :
20V
Antre kapasite (Ciss) (Max) @ Vds :
1360pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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