TK35E08N1,S1X Pricing (USD) [110596PC Stock]
- 1 pcs$0.39086
- 50 pcs$0.38892
- Nimewo Pati:
- TK35E08N1,S1X
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 80V 55A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - SCR, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Transistors - IGBTs - Single and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK35E08N1,S1X electronic components. TK35E08N1,S1X can be shipped within 24 hours after order. If you have any demands for TK35E08N1,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK35E08N1,S1X Atribi pwodwi yo
Nimewo Pati :
TK35E08N1,S1X
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 80V 55A TO-220
Seri :
U-MOSVIII-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
55A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
12.2 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 300µA
Chaje Gate (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1700pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
72W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220
Pake / Ka :
TO-220-3
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