Taiwan Semiconductor Corporation - TSM210N02CX RFG

KEY Part #: K6417183

TSM210N02CX RFG Pricing (USD) [891189PC Stock]

  • 1 pcs$0.04150

Nimewo Pati:
TSM210N02CX RFG
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
MOSFET N-CHANNEL 20V 6.7A SOT23.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single and Diodes - Zener - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM210N02CX RFG Atribi pwodwi yo

Nimewo Pati : TSM210N02CX RFG
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : MOSFET N-CHANNEL 20V 6.7A SOT23
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 25 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id : 800mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4nC @ 4.5V
Vgs (Max) : ±10V
Antre kapasite (Ciss) (Max) @ Vds : 600pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.56W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23
Pake / Ka : TO-236-3, SC-59, SOT-23-3