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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. FDC6312P

ON Semiconductor - FDC6312P

KEY Part #: K6525285

FDC6312P Pricing (USD) [590450PC Stock]

  • 1 pcs$0.06296
  • 3,000 pcs$0.06264
Nimewo Pati:
FDC6312P
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2P-CH 20V 2.3A SSOT-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDC6312P electronic components. FDC6312P can be shipped within 24 hours after order. If you have any demands for FDC6312P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDC6312P Atribi pwodwi yo

Nimewo Pati : FDC6312P
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2P-CH 20V 2.3A SSOT-6
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.3A
RD sou (Max) @ Id, Vgs : 115 mOhm @ 2.3A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 7nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 467pF @ 10V
Pouvwa - Max : 700mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè : SuperSOT™-6

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