Nimewo Pati :
SIE806DF-T1-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 30V 60A 10-POLARPAK
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.7 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
250nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
13000pF @ 15V
Disipasyon Pouvwa (Max) :
5.2W (Ta), 125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
10-PolarPAK® (L)
Pake / Ka :
10-PolarPAK® (L)