Vishay Siliconix - SIE806DF-T1-E3

KEY Part #: K6408568

[582PC Stock]


    Nimewo Pati:
    SIE806DF-T1-E3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 30V 60A 10-POLARPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - JFETs and Diodes - Zener - Single ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SIE806DF-T1-E3 electronic components. SIE806DF-T1-E3 can be shipped within 24 hours after order. If you have any demands for SIE806DF-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIE806DF-T1-E3 Atribi pwodwi yo

    Nimewo Pati : SIE806DF-T1-E3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 30V 60A 10-POLARPAK
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 1.7 mOhm @ 25A, 10V
    Vgs (th) (Max) @ Id : 2V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 250nC @ 10V
    Vgs (Max) : ±12V
    Antre kapasite (Ciss) (Max) @ Vds : 13000pF @ 15V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 5.2W (Ta), 125W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 10-PolarPAK® (L)
    Pake / Ka : 10-PolarPAK® (L)

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