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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APT30M19JVR

Microsemi Corporation - APT30M19JVR

KEY Part #: K6394099

APT30M19JVR Pricing (USD) [1624PC Stock]

  • 1 pcs$26.78599
  • 10 pcs$26.65272
Nimewo Pati:
APT30M19JVR
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 300V 130A SOT-227.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Modil pouvwa chofè, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - IGBTs - Single, Diodes - Zener - Arrays and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT30M19JVR electronic components. APT30M19JVR can be shipped within 24 hours after order. If you have any demands for APT30M19JVR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT30M19JVR Atribi pwodwi yo

Nimewo Pati : APT30M19JVR
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 300V 130A SOT-227
Seri : POWER MOS V®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 130A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 19 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4V @ 5mA
Chaje Gate (Qg) (Max) @ Vgs : 975nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 21600pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : ISOTOP®
Pake / Ka : SOT-227-4, miniBLOC

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