PHKD13N03LT,518 Pricing (USD) [3920PC Stock]
- 10,000 pcs$0.12669
- Nimewo Pati:
- PHKD13N03LT,518
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 10.4A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PHKD13N03LT,518 electronic components. PHKD13N03LT,518 can be shipped within 24 hours after order. If you have any demands for PHKD13N03LT,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHKD13N03LT,518 Atribi pwodwi yo
Nimewo Pati :
PHKD13N03LT,518
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET 2N-CH 30V 10.4A 8SOIC
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10.4A
RD sou (Max) @ Id, Vgs :
20 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
10.7nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
752pF @ 15V
Pouvwa - Max :
3.57W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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