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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APT12057B2LLG

Microsemi Corporation - APT12057B2LLG

KEY Part #: K6396172

APT12057B2LLG Pricing (USD) [3040PC Stock]

  • 1 pcs$15.75522
  • 30 pcs$15.67683
Nimewo Pati:
APT12057B2LLG
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 1200V 22A T-MAX.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single and Diodes - RF ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT12057B2LLG electronic components. APT12057B2LLG can be shipped within 24 hours after order. If you have any demands for APT12057B2LLG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT12057B2LLG Atribi pwodwi yo

Nimewo Pati : APT12057B2LLG
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 1200V 22A T-MAX
Seri : POWER MOS 7®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 570 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs : 290nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 6200pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 690W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : T-MAX™ [B2]
Pake / Ka : TO-247-3

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