IXTA2N100 Pricing (USD) [29270PC Stock]
- 1 pcs$1.62732
- 50 pcs$1.61922
- Nimewo Pati:
- IXTA2N100
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1000V 2A TO-263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in IXYS IXTA2N100 electronic components. IXTA2N100 can be shipped within 24 hours after order. If you have any demands for IXTA2N100, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA2N100 Atribi pwodwi yo
Nimewo Pati :
IXTA2N100
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1000V 2A TO-263
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
825pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
100W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263 (IXTA)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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