Infineon Technologies - BSC072N08NS5ATMA1

KEY Part #: K6419777

BSC072N08NS5ATMA1 Pricing (USD) [131504PC Stock]

  • 1 pcs$0.28715
  • 5,000 pcs$0.28572

Nimewo Pati:
BSC072N08NS5ATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 80V 74A 8TDSON.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays and Modil pouvwa chofè ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC072N08NS5ATMA1 Atribi pwodwi yo

Nimewo Pati : BSC072N08NS5ATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 80V 74A 8TDSON
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 74A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 7.2 mOhm @ 37A, 10V
Vgs (th) (Max) @ Id : 3.8V @ 36µA
Chaje Gate (Qg) (Max) @ Vgs : 29nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2100pF @ 40V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 69W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TDSON-8
Pake / Ka : 8-PowerTDFN

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