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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APT56M60B2

Microsemi Corporation - APT56M60B2

KEY Part #: K6394090

APT56M60B2 Pricing (USD) [6486PC Stock]

  • 1 pcs$7.02378
  • 33 pcs$6.98883
Nimewo Pati:
APT56M60B2
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 600V 56A T-MAX.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT56M60B2 electronic components. APT56M60B2 can be shipped within 24 hours after order. If you have any demands for APT56M60B2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT56M60B2 Atribi pwodwi yo

Nimewo Pati : APT56M60B2
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 600V 56A T-MAX
Seri : POWER MOS 8™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 130 mOhm @ 28A, 10V
Vgs (th) (Max) @ Id : 5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs : 280nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 11300pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1040W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247 [B]
Pake / Ka : TO-247-3 Variant

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