Vishay Semiconductor Diodes Division - MSE1PJHM3J/89A

KEY Part #: K6453386

MSE1PJHM3J/89A Pricing (USD) [984434PC Stock]

  • 1 pcs$0.03757
  • 9,000 pcs$0.03304

Nimewo Pati:
MSE1PJHM3J/89A
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 1A MICROSMP. Rectifiers 1.0A, 600V, ESD PROTECTION, SM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Diodes - RF, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MSE1PJHM3J/89A Atribi pwodwi yo

Nimewo Pati : MSE1PJHM3J/89A
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 1A MICROSMP
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 780ns
Kouran - Fèy Reverse @ Vr : 1µA @ 600V
Kapasite @ Vr, F : 5pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-219AD
Pake Aparèy Founisè : MicroSMP (DO-219AD)
Operating Tanperati - Junction : -55°C ~ 175°C

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