Vishay Semiconductor Diodes Division - BYQ28EB-100HE3/81

KEY Part #: K6479276

BYQ28EB-100HE3/81 Pricing (USD) [112580PC Stock]

  • 1 pcs$0.32854
  • 800 pcs$0.30772

Nimewo Pati:
BYQ28EB-100HE3/81
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE ARRAY GP 100V 5A TO263AB. Rectifiers 100 Volt 10A 20ns Dual Common Cathode
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Transistors - FETs, MOSFETs - Single, Transistors - JFETs and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYQ28EB-100HE3/81 electronic components. BYQ28EB-100HE3/81 can be shipped within 24 hours after order. If you have any demands for BYQ28EB-100HE3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYQ28EB-100HE3/81 Atribi pwodwi yo

Nimewo Pati : BYQ28EB-100HE3/81
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE ARRAY GP 100V 5A TO263AB
Seri : -
Estati Pati : Active
Konfigirasyon dyòd : 1 Pair Common Cathode
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 5A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 5A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 25ns
Kouran - Fèy Reverse @ Vr : 10µA @ 100V
Operating Tanperati - Junction : -40°C ~ 150°C
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB

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