BSB056N10NN3GXUMA1 Pricing (USD) [59902PC Stock]
- 1 pcs$0.65273
- 5,000 pcs$0.59887
- Nimewo Pati:
- BSB056N10NN3GXUMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 9A WDSON-2.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Tiristors - SCR, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSB056N10NN3GXUMA1 electronic components. BSB056N10NN3GXUMA1 can be shipped within 24 hours after order. If you have any demands for BSB056N10NN3GXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSB056N10NN3GXUMA1 Atribi pwodwi yo
Nimewo Pati :
BSB056N10NN3GXUMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 9A WDSON-2
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9A (Ta), 83A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
5.6 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
74nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5500pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.8W (Ta), 78W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
MG-WDSON-2, CanPAK M™
Pake / Ka :
3-WDSON
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