IKB03N120H2ATMA1 Pricing (USD) [73899PC Stock]
- 1 pcs$0.52911
- 1,000 pcs$0.47315
- Nimewo Pati:
- IKB03N120H2ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 1200V 9.6A 62.5W TO220-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IKB03N120H2ATMA1 electronic components. IKB03N120H2ATMA1 can be shipped within 24 hours after order. If you have any demands for IKB03N120H2ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IKB03N120H2ATMA1 Atribi pwodwi yo
Nimewo Pati :
IKB03N120H2ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 1200V 9.6A 62.5W TO220-3
Seri :
-
Estati Pati :
Not For New Designs
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
9.6A
Kouran - Pèseptè batman (Icm) :
9.9A
Vce (sou) (Max) @ Vge, Ic :
2.8V @ 15V, 3A
Pouvwa - Max :
62.5W
Oblije chanje enèji :
290µJ
Kalite Antre :
Standard
Gate chaje :
22nC
Td (on / off) @ 25 ° C :
9.2ns/281ns
Kondisyon egzamen an :
800V, 3A, 82 Ohm, 15V
Ranvèse Tan Reverse (trr) :
42ns
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
PG-TO263-3-2
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