Nimewo Pati :
TSM60N900CH C5G
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET N-CH 600V 4.5A TO251
Estati Pati :
Not For New Designs
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
900 mOhm @ 2.3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9.7nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
480pF @ 100V
Disipasyon Pouvwa (Max) :
50W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-251 (IPAK)
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA