IXYS X4-Class 135V-150V Power MOSFETs

Author : Ixys Published Time : 2019-06-26
IXYS X4-Class 135V-150V Power MOSFETs are developed using a charge compensation principle and proprietary process technology. This technology results in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. These MOSFETs are also avalanche rated and exhibit a superior dv/dt performance. Due to the positive temperature coefficient of their on-state resistance, these MOSFETs can be operated in parallel to meet higher current requirements.

Features

Low on-resistance RDS(ON) and gate charge Qgdv/dt ruggedness

Applications

Synchronous rectification in switching power suppliesMotor control (48V-80V systems)DC-DC convertersUninterruptible power supplies
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