SIHG28N65EF-GE3 Pricing (USD) [19485PC Stock]
- 1 pcs$3.38458
- 10 pcs$3.02012
- 100 pcs$2.47651
- 500 pcs$2.00536
- 1,000 pcs$1.69127
- Nimewo Pati:
- SIHG28N65EF-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 650V 28A TO-247AC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIHG28N65EF-GE3 electronic components. SIHG28N65EF-GE3 can be shipped within 24 hours after order. If you have any demands for SIHG28N65EF-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHG28N65EF-GE3 Atribi pwodwi yo
Nimewo Pati :
SIHG28N65EF-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 650V 28A TO-247AC
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
28A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
117 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
146nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
3249pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
250W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247AC
Pake / Ka :
TO-247-3
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