Taiwan Semiconductor Corporation - BZT52B6V2-G RHG

KEY Part #: K6496147

BZT52B6V2-G RHG Pricing (USD) [1982646PC Stock]

  • 1 pcs$0.01866

Nimewo Pati:
BZT52B6V2-G RHG
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
DIODE ZENER 6.2V 410MW SOD123. Zener Diodes Zener 350mW 2% 6V2
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Taiwan Semiconductor Corporation BZT52B6V2-G RHG electronic components. BZT52B6V2-G RHG can be shipped within 24 hours after order. If you have any demands for BZT52B6V2-G RHG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BZT52B6V2-G RHG Atribi pwodwi yo

Nimewo Pati : BZT52B6V2-G RHG
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : DIODE ZENER 6.2V 410MW SOD123
Seri : -
Estati Pati : Active
Voltage - Zener (Nom) (Vz) : 6.2V
Tolerans : ±2%
Pouvwa - Max : 410mW
Enpedans (Max) (Zzt) : 10 Ohms
Kouran - Fèy Reverse @ Vr : 3µA @ 4V
Voltage - Forward (Vf) (Max) @ Si : 900mV @ 10mA
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOD-123
Pake Aparèy Founisè : SOD-123

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