Diodes Incorporated - SBR3M30P1-7

KEY Part #: K6456899

SBR3M30P1-7 Pricing (USD) [421931PC Stock]

  • 1 pcs$0.08810
  • 3,000 pcs$0.08766
  • 6,000 pcs$0.08201
  • 15,000 pcs$0.07635

Nimewo Pati:
SBR3M30P1-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
DIODE SBR 30V 3A POWERDI123. Schottky Diodes & Rectifiers 3A 30V Ultralow IR
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated SBR3M30P1-7 electronic components. SBR3M30P1-7 can be shipped within 24 hours after order. If you have any demands for SBR3M30P1-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SBR3M30P1-7 Atribi pwodwi yo

Nimewo Pati : SBR3M30P1-7
Manifakti : Diodes Incorporated
Deskripsyon : DIODE SBR 30V 3A POWERDI123
Seri : SBR®
Estati Pati : Active
Kalite dyòd : Super Barrier
Voltage - DC Ranvèse (Vr) (Max) : 30V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 500mV @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 200µA @ 30V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : POWERDI®123
Pake Aparèy Founisè : PowerDI™ 123
Operating Tanperati - Junction : -65°C ~ 175°C

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