Vishay Semiconductor Diodes Division - ESH2D-E3/5BT

KEY Part #: K6449788

ESH2D-E3/5BT Pricing (USD) [550157PC Stock]

  • 1 pcs$0.06723
  • 6,400 pcs$0.05751

Nimewo Pati:
ESH2D-E3/5BT
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 200V 2A DO214AA. Rectifiers 200 Volt 2.0A 25ns Glass Passivated
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division ESH2D-E3/5BT electronic components. ESH2D-E3/5BT can be shipped within 24 hours after order. If you have any demands for ESH2D-E3/5BT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH2D-E3/5BT Atribi pwodwi yo

Nimewo Pati : ESH2D-E3/5BT
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 2A DO214AA
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 2A
Voltage - Forward (Vf) (Max) @ Si : 930mV @ 2A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 35ns
Kouran - Fèy Reverse @ Vr : 2µA @ 200V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -55°C ~ 175°C

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