UGB8HTHE3/81 Pricing (USD) [93417PC Stock]
- 1 pcs$0.41856
- 800 pcs$0.39203
- Nimewo Pati:
- UGB8HTHE3/81
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 500V 8A TO263AB. Rectifiers 500 Volt 8.0A 25ns 100 Amp IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division UGB8HTHE3/81 electronic components. UGB8HTHE3/81 can be shipped within 24 hours after order. If you have any demands for UGB8HTHE3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UGB8HTHE3/81 Atribi pwodwi yo
Nimewo Pati :
UGB8HTHE3/81
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 500V 8A TO263AB
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
500V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
1.75V @ 8A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
30µA @ 500V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
TO-263AB
Operating Tanperati - Junction :
-55°C ~ 150°C
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