VS-2EFH02-M3/I Pricing (USD) [665064PC Stock]
- 1 pcs$0.05562
- 10,000 pcs$0.05040
- 30,000 pcs$0.04634
- Nimewo Pati:
- VS-2EFH02-M3/I
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 200V 2A DO219AB. Rectifiers Hypfst Rect 2A 200V
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Transistors - IGBTs - Arrays, Modil pouvwa chofè and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division VS-2EFH02-M3/I electronic components. VS-2EFH02-M3/I can be shipped within 24 hours after order. If you have any demands for VS-2EFH02-M3/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-2EFH02-M3/I Atribi pwodwi yo
Nimewo Pati :
VS-2EFH02-M3/I
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 200V 2A DO219AB
Seri :
FRED Pt®
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
2A
Voltage - Forward (Vf) (Max) @ Si :
950mV @ 2A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
25ns
Kouran - Fèy Reverse @ Vr :
2µA @ 200V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-219AB
Pake Aparèy Founisè :
DO-219AB (SMF)
Operating Tanperati - Junction :
-65°C ~ 175°C
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