GeneSiC Semiconductor - GC10MPS12-220

KEY Part #: K6433306

GC10MPS12-220 Pricing (USD) [7838PC Stock]

  • 1 pcs$5.25755

Nimewo Pati:
GC10MPS12-220
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
SIC DIODE 1200V 10A TO-220-2.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor GC10MPS12-220 electronic components. GC10MPS12-220 can be shipped within 24 hours after order. If you have any demands for GC10MPS12-220, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GC10MPS12-220 Atribi pwodwi yo

Nimewo Pati : GC10MPS12-220
Manifakti : GeneSiC Semiconductor
Deskripsyon : SIC DIODE 1200V 10A TO-220-2
Seri : -
Estati Pati : Active
Kalite dyòd : Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) : 1200V
Kouran - Mwayèn Rèktifye (Io) : 54A (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.8V @ 10A
Vitès : No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) : 0ns
Kouran - Fèy Reverse @ Vr : 10µA @ 1200V
Kapasite @ Vr, F : 660pF @ 1V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2
Pake Aparèy Founisè : TO-220-2
Operating Tanperati - Junction : -55°C ~ 175°C
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