Nimewo Pati :
ESH2BHE3/5BT
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 2A DO214AA
Estati Pati :
Discontinued at Digi-Key
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
2A
Voltage - Forward (Vf) (Max) @ Si :
930mV @ 2A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
35ns
Kouran - Fèy Reverse @ Vr :
2µA @ 100V
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AA, SMB
Pake Aparèy Founisè :
DO-214AA (SMB)
Operating Tanperati - Junction :
-55°C ~ 175°C