Vishay Semiconductor Diodes Division - VFT1080S-M3/4W

KEY Part #: K6426983

VFT1080S-M3/4W Pricing (USD) [225677PC Stock]

  • 1 pcs$0.17295
  • 2,000 pcs$0.17209

Nimewo Pati:
VFT1080S-M3/4W
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 10A 80V ITO-220AB. Rectifiers 10A,80V,TRENCH SKY RECT.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VFT1080S-M3/4W electronic components. VFT1080S-M3/4W can be shipped within 24 hours after order. If you have any demands for VFT1080S-M3/4W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VFT1080S-M3/4W Atribi pwodwi yo

Nimewo Pati : VFT1080S-M3/4W
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 10A 80V ITO-220AB
Seri : TMBS®
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 80V
Kouran - Mwayèn Rèktifye (Io) : 10A
Voltage - Forward (Vf) (Max) @ Si : 810mV @ 10A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 600µA @ 80V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3 Full Pack, Isolated Tab
Pake Aparèy Founisè : ITO-220AB
Operating Tanperati - Junction : -55°C ~ 150°C

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