GeneSiC Semiconductor - MBRT600200

KEY Part #: K6468962

MBRT600200 Pricing (USD) [844PC Stock]

  • 1 pcs$54.94338
  • 25 pcs$38.22151

Nimewo Pati:
MBRT600200
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
DIODE SCHOTTKY 200V 300A 3 TOWER.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor MBRT600200 electronic components. MBRT600200 can be shipped within 24 hours after order. If you have any demands for MBRT600200, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MBRT600200 Atribi pwodwi yo

Nimewo Pati : MBRT600200
Manifakti : GeneSiC Semiconductor
Deskripsyon : DIODE SCHOTTKY 200V 300A 3 TOWER
Seri : -
Estati Pati : Active
Konfigirasyon dyòd : 1 Pair Common Cathode
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 300A
Voltage - Forward (Vf) (Max) @ Si : 920mV @ 300A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 1mA @ 200V
Operating Tanperati - Junction : -55°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : Three Tower
Pake Aparèy Founisè : Three Tower
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