Manifakti :
MICROSS/On Semiconductor
Deskripsyon :
IC GATE NAND 4CH 2-INP DIE
Voltage - Pwovizyon pou :
2V ~ 6V
Aktyèl - Mwens (Max) :
2µA
Kouran - Sòti segondè, ki ba :
24mA, 24mA
Nivo Lojik - Ba :
0.9V ~ 1.65V
Nivo Lojik - Segondè :
2.1V ~ 3.85V
Max Pwopagasyon Reta @ V, Max CL :
9ns @ 5V, -
Operating Tanperati :
-40°C ~ 85°C
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
Die