Vishay Semiconductor Diodes Division - ESH3B-M3/9AT

KEY Part #: K6457160

ESH3B-M3/9AT Pricing (USD) [374354PC Stock]

  • 1 pcs$0.09880
  • 7,000 pcs$0.08954

Nimewo Pati:
ESH3B-M3/9AT
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 3A DO214AB. Rectifiers 3A,100V,25NS,UF Rect, SMD
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction, Diodes - RF, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division ESH3B-M3/9AT electronic components. ESH3B-M3/9AT can be shipped within 24 hours after order. If you have any demands for ESH3B-M3/9AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH3B-M3/9AT Atribi pwodwi yo

Nimewo Pati : ESH3B-M3/9AT
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 3A DO214AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 900mV @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 40ns
Kouran - Fèy Reverse @ Vr : 5µA @ 100V
Kapasite @ Vr, F : 70pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AB, SMC
Pake Aparèy Founisè : DO-214AB (SMC)
Operating Tanperati - Junction : -55°C ~ 175°C

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