Nimewo Pati :
UH6PJ-M3/86A
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 600V 6A TO277A
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
6A
Voltage - Forward (Vf) (Max) @ Si :
3V @ 6A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
45ns
Kouran - Fèy Reverse @ Vr :
10µA @ 600V
Kapasite @ Vr, F :
30pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-277, 3-PowerDFN
Pake Aparèy Founisè :
TO-277A (SMPC)
Operating Tanperati - Junction :
-55°C ~ 175°C