Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Sikwi entegre Integrated (IC)
  4. Memwa
  5. TC58BVG2S0HBAI4

Toshiba Memory America, Inc. - TC58BVG2S0HBAI4

KEY Part #: K938186

TC58BVG2S0HBAI4 Pricing (USD) [19471PC Stock]

  • 1 pcs$2.35334
Nimewo Pati:
TC58BVG2S0HBAI4
Manifakti:
Toshiba Memory America, Inc.
Detaye deskripsyon:
IC FLASH 4G PARALLEL 63TFBGA. NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Embedded - DSP (Digital Signal Processors), Entèfas - Contrôleur, Clock / Distribisyon - Tanpon revèy, chofè yo, Lojik - Comparators, Embedded - Sistèm Sou Chip (SoC), PMIC - Enèji Metering, Revèy / Distribisyon - Liy reta and Embedded - CPLDs (Aparèy lojik Pwogramè konplèks) ...
Avantaj konpetitif:
We specialize in Toshiba Memory America, Inc. TC58BVG2S0HBAI4 electronic components. TC58BVG2S0HBAI4 can be shipped within 24 hours after order. If you have any demands for TC58BVG2S0HBAI4, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TC58BVG2S0HBAI4 Atribi pwodwi yo

Nimewo Pati : TC58BVG2S0HBAI4
Manifakti : Toshiba Memory America, Inc.
Deskripsyon : IC FLASH 4G PARALLEL 63TFBGA
Seri : Benand™
Estati Pati : Active
Kalite memwa yo : Non-Volatile
Fòma memwa : FLASH
Teknoloji : FLASH - NAND (SLC)
Size memwa : 4Gb (512M x 8)
Frè frekans lan : -
Ekri Sik Tan - Pawòl, Page : 25ns
Tan aksè : 25ns
Entèfas memwa : Parallel
Voltage - Pwovizyon pou : 2.7V ~ 3.6V
Operating Tanperati : -40°C ~ 85°C (TA)
Mounting Kalite : Surface Mount
Pake / Ka : 63-VFBGA
Pake Aparèy Founisè : 63-TFBGA (9x11)

Dènye nouvèl

Toshiba Memory THGAM e-MMC™ NAND Flash Memory
Toshiba Memory THGAF Managed NAND Flash Memories
Toshiba Memory FlashAir™ W-04 Wireless SD Cards
Ou ka enterese tou
  • AT27C4096-90PU

    Microchip Technology

    IC EPROM 4M PARALLEL 40DIP. EPROM 4Mb (256Kx16) OTP 5V 90ns

  • 71V3576S150PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP.

  • 71V3577S75PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP. SRAM 4M 3.3V I/O PBSRAM SLOW X

  • W94AD2KBJX5I

    Winbond Electronics

    IC DRAM 1G PARALLEL 90VFBGA. DRAM 1G mDDR, x32, 200MHz, Ind temp

  • TC58BYG2S0HBAI4

    Toshiba Memory America, Inc.

    4GB SLC BENAND 24NM BGA 9X11 EE. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)

  • TC58BVG2S0HBAI4

    Toshiba Memory America, Inc.

    IC FLASH 4G PARALLEL 63TFBGA. NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)

Pati cho