Vishay Semiconductor Diodes Division - S1FLJ-GS18

KEY Part #: K6439430

S1FLJ-GS18 Pricing (USD) [2154871PC Stock]

  • 1 pcs$0.01725
  • 50,000 pcs$0.01716

Nimewo Pati:
S1FLJ-GS18
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 1A DO219AB. Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Tiristors - SCR, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single and Diodes - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division S1FLJ-GS18 electronic components. S1FLJ-GS18 can be shipped within 24 hours after order. If you have any demands for S1FLJ-GS18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1FLJ-GS18 Atribi pwodwi yo

Nimewo Pati : S1FLJ-GS18
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 1A DO219AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 700mA
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 1.8µs
Kouran - Fèy Reverse @ Vr : 10µA @ 600V
Kapasite @ Vr, F : 4pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-219AB
Pake Aparèy Founisè : DO-219AB (SMF)
Operating Tanperati - Junction : -55°C ~ 150°C

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