V8PAM10-M3/I Pricing (USD) [478125PC Stock]
- 1 pcs$0.07736
- Nimewo Pati:
- V8PAM10-M3/I
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE SCHOTTKY 100V 8A DO221BC. Schottky Diodes & Rectifiers If 8A Vrrm 100V Ifsm 100A
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Diodes - RF and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division V8PAM10-M3/I electronic components. V8PAM10-M3/I can be shipped within 24 hours after order. If you have any demands for V8PAM10-M3/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
V8PAM10-M3/I Atribi pwodwi yo
Nimewo Pati :
V8PAM10-M3/I
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE SCHOTTKY 100V 8A DO221BC
Seri :
eSMP®, TMBS®
Estati Pati :
Active
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
780mV @ 8A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
200µA @ 100V
Kapasite @ Vr, F :
810pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-221BC, SMA Flat Leads Exposed Pad
Pake Aparèy Founisè :
DO-221BC (SMPA)
Operating Tanperati - Junction :
-40°C ~ 175°C
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