GeneSiC Semiconductor - GB02SHT06-46

KEY Part #: K6440058

GB02SHT06-46 Pricing (USD) [1740PC Stock]

  • 1 pcs$25.86141
  • 10 pcs$24.18241
  • 25 pcs$22.36534
  • 100 pcs$20.96748

Nimewo Pati:
GB02SHT06-46
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
DIODE SCHOTTKY 600V 4A. Schottky Diodes & Rectifiers SiC Schottky Diode
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor GB02SHT06-46 electronic components. GB02SHT06-46 can be shipped within 24 hours after order. If you have any demands for GB02SHT06-46, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GB02SHT06-46 Atribi pwodwi yo

Nimewo Pati : GB02SHT06-46
Manifakti : GeneSiC Semiconductor
Deskripsyon : DIODE SCHOTTKY 600V 4A
Seri : -
Estati Pati : Active
Kalite dyòd : Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 4A (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.6V @ 1A
Vitès : No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) : 0ns
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Kapasite @ Vr, F : 76pF @ 1V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : TO-206AB, TO-46-3 Metal Can
Pake Aparèy Founisè : TO-46
Operating Tanperati - Junction : -55°C ~ 225°C
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