Nimewo Pati :
APTGT50H60RT3G
Manifakti :
Microsemi Corporation
Deskripsyon :
POWER MOD IGBT3 FULL BRIDGE SP3
Kalite IGBT :
Trench Field Stop
Nou konte genyen :
Full Bridge Inverter
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
80A
Vce (sou) (Max) @ Vge, Ic :
1.9V @ 15V, 50A
Kouran - Cutoff Pèseptè (Max) :
250µA
Antre kapasite (Cies) @ Vce :
3.15nF @ 25V
Antre :
Single Phase Bridge Rectifier
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP3