Vishay Semiconductor Diodes Division - M20H100CTGHE3_A/P

KEY Part #: K6475423

[6290PC Stock]


    Nimewo Pati:
    M20H100CTGHE3_A/P
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE ARRAY GP TO220AB.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Diodes - RF and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division M20H100CTGHE3_A/P electronic components. M20H100CTGHE3_A/P can be shipped within 24 hours after order. If you have any demands for M20H100CTGHE3_A/P, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M20H100CTGHE3_A/P Atribi pwodwi yo

    Nimewo Pati : M20H100CTGHE3_A/P
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE ARRAY GP TO220AB
    Seri : Automotive, AEC-Q101
    Estati Pati : Obsolete
    Konfigirasyon dyòd : 1 Pair Common Cathode
    Kalite dyòd : Schottky
    Voltage - DC Ranvèse (Vr) (Max) : 100V
    Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 10A
    Voltage - Forward (Vf) (Max) @ Si : 930mV @ 20A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : -
    Kouran - Fèy Reverse @ Vr : 3.5µA @ 100V
    Operating Tanperati - Junction : -65°C ~ 175°C
    Mounting Kalite : Through Hole
    Pake / Ka : TO-220-3
    Pake Aparèy Founisè : TO-220AB

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