Vishay Semiconductor Diodes Division - GSOT12C-HT3-GS08

KEY Part #: K6033938

[10354PC Stock]


    Nimewo Pati:
    GSOT12C-HT3-GS08
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    TVS DIODE 12V 26V LLP75-3B.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Koupe tèmik (Fizyon tèmik), Pwodwi pou Telefòn, TVS - Tiristors, Awondisman Awondisman yo, TVS - Varistors, MOVs, Anvwaye Limitè Kouran (ICL), Fusion and Ground Fault Circuit Interrupter (GFCI) ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division GSOT12C-HT3-GS08 electronic components. GSOT12C-HT3-GS08 can be shipped within 24 hours after order. If you have any demands for GSOT12C-HT3-GS08, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GSOT12C-HT3-GS08 Atribi pwodwi yo

    Nimewo Pati : GSOT12C-HT3-GS08
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : TVS DIODE 12V 26V LLP75-3B
    Seri : Automotive, AEC-Q101
    Estati Pati : Obsolete
    Kalite : Zener
    Chanèl Unidirèksyonèl : 2
    Chanèl bidirèksyonèl yo : -
    Voltage - Ranvèse kanpe (Tip) : 12V (Min)
    Vòltaj - Dekonpozisyon (Min) : 13.5V
    Voltage - blocage (Max) @ Ipp : 26V
    Kouran - Pik batman (10 / 1000µs) : 12A (8/20µs)
    Pouvwa - Peak batman kè : 312W
    Pwoteksyon Liy Pouvwa : No
    Aplikasyon : Automotive
    Kapasite @ frekans : 115pF @ 1MHz
    Operating Tanperati : -40°C ~ 125°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 3-WDFN
    Pake Aparèy Founisè : LLP75-3B

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