Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Sikwi entegre Integrated (IC)
  4. Memwa
  5. AS4C64M8D1-5BIN

Alliance Memory, Inc. - AS4C64M8D1-5BIN

KEY Part #: K939770

AS4C64M8D1-5BIN Pricing (USD) [26775PC Stock]

  • 1 pcs$1.71994
  • 240 pcs$1.71138
Nimewo Pati:
AS4C64M8D1-5BIN
Manifakti:
Alliance Memory, Inc.
Detaye deskripsyon:
IC DRAM 512M PARALLEL 60FBGA. DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Memwa - konfigirasyon bal fen pou FPGAs, Lineyè - Videyo Processing, Entèfas - switch analog, multiplexeurs, Demultiple, IC espesyalize yo, Revèy / Distribisyon - Minis pwogramasyon ak osila, Revèy / Distribisyon - Batri IC, PMIC - Chargers batri and PMIC - regilatè Voltage - regulateur lineyè regila ...
Avantaj konpetitif:
We specialize in Alliance Memory, Inc. AS4C64M8D1-5BIN electronic components. AS4C64M8D1-5BIN can be shipped within 24 hours after order. If you have any demands for AS4C64M8D1-5BIN, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C64M8D1-5BIN Atribi pwodwi yo

Nimewo Pati : AS4C64M8D1-5BIN
Manifakti : Alliance Memory, Inc.
Deskripsyon : IC DRAM 512M PARALLEL 60FBGA
Seri : -
Estati Pati : Active
Kalite memwa yo : Volatile
Fòma memwa : DRAM
Teknoloji : SDRAM - DDR
Size memwa : 512Mb (64M x 8)
Frè frekans lan : 200MHz
Ekri Sik Tan - Pawòl, Page : 15ns
Tan aksè : 700ps
Entèfas memwa : Parallel
Voltage - Pwovizyon pou : 2.3V ~ 2.7V
Operating Tanperati : -40°C ~ 85°C (TA)
Mounting Kalite : Surface Mount
Pake / Ka : 60-TFBGA
Pake Aparèy Founisè : 60-FBGA (8x13)

Dènye nouvèl

Alliance Memory Low Power CMOS SRAM
Alliance Memory MT41x DDR3 SDRAMs
Alliance Memory Low-Power DDR2 SDRAM
Ou ka enterese tou
  • N01S818HAT22I

    ON Semiconductor

    IC SRAM 1M SPI 20MHZ 8TSSOP. SRAM 1MB, 1.8V, HOLD FUNCT

  • N01S830HAT22I

    ON Semiconductor

    IC SRAM 1M SPI 20MHZ 8TSSOP. SRAM 1MB UltraLow Pwr Serial SRAM

  • N01S830BAT22I

    ON Semiconductor

    IC SRAM 1M SPI 20MHZ 8TSSOP. SRAM 1MB, 3V, BATT BU FUNCT

  • R1LP5256ESP-5SI#B0

    Renesas Electronics America

    IC SRAM 256K PARALLEL 28SOP. SRAM SRAM SRAM LP(256K) 256K LP

  • R1LV5256ESP-5SI#B0

    Renesas Electronics America

    IC SRAM 256K PARALLEL 28SOP. SRAM 256kb 3V Adv. SRAM x8, SOP 55NS WTR Tube

  • 71256SA25TPGI

    IDT, Integrated Device Technology Inc

    IC SRAM 256K PARALLEL 28DIP. SRAM 32Kx8 ASYNCHRONOUS 5.0V STATIC RAM

Pati cho