Toshiba Semiconductor and Storage - DF2B18FU,H3F

KEY Part #: K6036080

DF2B18FU,H3F Pricing (USD) [1436579PC Stock]

  • 1 pcs$0.02588
  • 3,000 pcs$0.02575
  • 6,000 pcs$0.02317
  • 15,000 pcs$0.02060
  • 30,000 pcs$0.01931
  • 75,000 pcs$0.01716

Nimewo Pati:
DF2B18FU,H3F
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
TVS DIODE 12V 33V USC. ESD Suppressors / TVS Diodes ESD Protection Diode SNG Bi-directional
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: TVS - Tiristors, Koupe tèmik (Fizyon tèmik), Ground Fault Circuit Interrupter (GFCI), Gaz Dechè Sispansyon aresters (GDT), Anvwaye Limitè Kouran (ICL), Fuse nan, Elektrik, Fusion spesyalite and Televizyon - Teknoloji Melanje ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage DF2B18FU,H3F electronic components. DF2B18FU,H3F can be shipped within 24 hours after order. If you have any demands for DF2B18FU,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DF2B18FU,H3F Atribi pwodwi yo

Nimewo Pati : DF2B18FU,H3F
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : TVS DIODE 12V 33V USC
Seri : -
Estati Pati : Active
Kalite : Zener
Chanèl Unidirèksyonèl : -
Chanèl bidirèksyonèl yo : 1
Voltage - Ranvèse kanpe (Tip) : 12V
Vòltaj - Dekonpozisyon (Min) : 16.2V
Voltage - blocage (Max) @ Ipp : 33V
Kouran - Pik batman (10 / 1000µs) : 2.5A (8/20µs)
Pouvwa - Peak batman kè : 80W
Pwoteksyon Liy Pouvwa : No
Aplikasyon : Automotive
Kapasite @ frekans : 9pF @ 1MHz
Operating Tanperati : -
Mounting Kalite : Surface Mount
Pake / Ka : SC-76, SOD-323
Pake Aparèy Founisè : USC

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