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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDI9406-F085

ON Semiconductor - FDI9406-F085

KEY Part #: K6417663

FDI9406-F085 Pricing (USD) [38165PC Stock]

  • 1 pcs$1.02449
Nimewo Pati:
FDI9406-F085
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 40V 110A TO262AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Tiristors - TRIACs and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDI9406-F085 electronic components. FDI9406-F085 can be shipped within 24 hours after order. If you have any demands for FDI9406-F085, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDI9406-F085 Atribi pwodwi yo

Nimewo Pati : FDI9406-F085
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 40V 110A TO262AB
Seri : Automotive, AEC-Q101, PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 110A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.2 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 138nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 7710pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 176W (Tj)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : I2PAK (TO-262)
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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