Toshiba Semiconductor and Storage - 1SS307E,L3F

KEY Part #: K6453229

1SS307E,L3F Pricing (USD) [3127807PC Stock]

  • 1 pcs$0.19775
  • 10 pcs$0.14040
  • 25 pcs$0.11533
  • 100 pcs$0.09223
  • 250 pcs$0.06706
  • 500 pcs$0.05449
  • 1,000 pcs$0.04192
  • 2,500 pcs$0.03773

Nimewo Pati:
1SS307E,L3F
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
DIODE GEN PURP 80V 100MA SC79. Diodes - General Purpose, Power, Switching Switching diode SNG Low leak current
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage 1SS307E,L3F electronic components. 1SS307E,L3F can be shipped within 24 hours after order. If you have any demands for 1SS307E,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS307E,L3F Atribi pwodwi yo

Nimewo Pati : 1SS307E,L3F
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : DIODE GEN PURP 80V 100MA SC79
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 80V
Kouran - Mwayèn Rèktifye (Io) : 100mA
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 100mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 10nA @ 80V
Kapasite @ Vr, F : 6pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SC-79, SOD-523
Pake Aparèy Founisè : SC-79
Operating Tanperati - Junction : 150°C (Max)

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