Nimewo Pati :
RS1PGHE3/85A
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 400V 1A DO220AA
Voltage - DC Ranvèse (Vr) (Max) :
400V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
150ns
Kouran - Fèy Reverse @ Vr :
1µA @ 400V
Kapasite @ Vr, F :
9pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DO-220AA (SMP)
Operating Tanperati - Junction :
-55°C ~ 150°C